Samsung Semiconductor Newsroom
Dynamic Random Acess Memory (DRAM) Explained | 'All About Semiconductor' by Samsung Semiconductor
P&S DRAM Bender: Hidden Row Activation for Reducing Refresh Latency of Off-the-Shelf DRAM Chips
P&S DRAM Bender: Generating True Random Numbers Using Quadruple Activation in Real Chips
ISCA'23 - Lightning Talks - Session2B - RowPress: Amplifying Read-Disturbance in Modern DRAM Chips
SAFARI-EFCL Seminar - A Potpourri of Ideas & Results in DRAM, FPGA Infrastructures & RISC-V Procs
RAM CHECK - Quick way to view (DDR4, GDDR5X...) which manufacturer's DRAM Chips power your RAM & GPU
Understanding and Modeling On-Die Error Correction in Modern DRAM Chips; DSN'19 Talk by Minesh Patel
An Experimental Analysis of RowHammer in HBM2 DRAM Chips | Full Talk/Q&A in DSN'23 by Ataberk Olgun
SAFARI Live Seminar: High-Throughput TRNG Using Quadruple Row Activation in Commodity DRAM Chips
Digitial oscilloscope repairs & other live events
Tektronix TLA7AB4 logic analyzer module repairs bad DRAM chips HD 720p
SAFARI Live Seminar - A Deeper Look into RowHammer’s Characteristics in Real Modern DRAM Chips
Seminar in Computer Architecture - S5: pLUTo & A Case for Self-Managing DRAM Chips (Spring 2023)
Gate CS pyqs - the other way [Eng]
Gate 2010 pyq CAO | A main memory unit with a capacity of 4 megabytes is built using 1M × 1-bit DRAM
QUAC-TRNG: High-Throughput True Random Numbers in DRAM -- Short Talk at ISCA'21 by A. Olgun (7 mins)
P&S DRAM Bender: Research Paper Presentation - An Experimental Analysis of RowHammer in HBM2 Chips
Ariima DeepTech Circle by Manoj Ramaiah
SK hynix: The Semiconductor Giant Powering AI's Future #shorts
GATE 2018 CS Q23. A 32-bit wide main memory unit with a capacity of 1 GB built using DRAM chips
Efficient and Scalable Read Disturbance Mitigation - Research Summary by Giray Yaglikci at HOST 2024
QUAC-TRNG: High-Throughput True Random Numbers in DRAM -- Q/A Session at ISCA'21 by A. Olgun
U.S. pressures South Korea to limit exports of high-performance 3D stacked DRAM chips to China.
